A SELF-ALIGNED LATERAL BIPOLAR-TRANSISTOR REALIZED ON SIMOX-MATERIAL

被引：20

作者：

EDHOLM, B

OLSSON, J

SODERBARG, A

机构：

[1] Department of Electronics Technology, Uppsala University, Uppsala

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 12期

关键词：

D O I：

10.1109/16.249487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lateral bipolar transistors, compatible with CMOS process on SOI, have been fabricated on high quality SIMOX-material. A self-aligned nitride spacer technique is used for base width definition and for emitter alignment. Current gains of 40, and high collector-emitter breakdown voltages, have been obtained for transistors with base widths of 4000 Angstrom.

引用

页码：2359 / 2360

页数：2

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