HIGH-SPEED FULLY SELF-ALIGNED SINGLE-CRYSTAL CONTACTED SILICON BIPOLAR-TRANSISTOR

被引：1
|
作者：
GLENN, JL
NEUDECK, GW
机构：
[1] School of Electrical Engineering, Purdue University, Indiana, West Lafayette
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 20期
关键词：
Bipolar transistors; Epitaxial lateral overgrowth; High-speed devices; Self-aligned;
D O I：
10.1049/el:19901073
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel high-speed self-aligned npn bipolar transistor fabrication process is presented. Base contacts are formed by epitaxial lateral overgrowth of single-crystal silicon on silicon-dioxide. Impurity-enhanced oxidation of silicon is used to achieve self-alignment of the emitter. Ultra-low resistance p-type base contacts have been fabricated with measured sheet resistances of 19Ω/⌕. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：1677 / 1679
页数：3
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