INFRARED-ANALYSIS OF BURIED INSULATOR LAYERS FORMED BY ION-IMPLANTATION INTO SILICON

被引：7
|
作者：
SAMITIER, J
MARTINEZ, S
ELHASSANI, A
PEREZRODRIGUEZ, A
MORANTE, JR
机构：
[1] LCMM, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, 08028 Barcelona
来源：
APPLIED SURFACE SCIENCE | 1993年 / 63卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(93)90113-P
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this work the strong influence of geometrical features on experimental transmission and reflection IR spectra on multilayer structures is reported. This dependence implies the need for a theoretical simulation of spectra in order to avoid misinterpretation of data. An experimental and theoretical procedure for the analysis of buried layers is proposed and discussed using experimental data from buried layers in Si formed by oxygen and nitrogen ion implantation. This procedure has allowed the structural analysis of the buried layers in Si to be made.
引用
收藏
页码：312 / 315
页数：4
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