EFFECTS OF TEMPERATURE ON SOLID-PHASE EPITAXY OF SILICON

被引：1

作者：

LIAU, ZL ^{[1
]}

LAU, SS ^{[1
]}

NICOLET, MA ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91109

来源：

THIN SOLID FILMS | 1977年 / 46卷 / 01期

关键词：

D O I：

10.1016/0040-6090(77)90344-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：93 / 98

页数：6

共 50 条

[11] DOPING OF SILICON IN MOLECULAR-BEAM EPITAXY SYSTEMS BY SOLID-PHASE EPITAXY
STREIT, D
METZGER, RA
ALLEN, FG
APPLIED PHYSICS LETTERS, 1984, 44 (02) : 234 - 236
[12] SOLID-PHASE EPITAXY OF POLYCRYSTALLINE SILICON FILMS - EFFECTS OF ION-IMPLANTATION DAMAGE
QUACH, NT
REIF, R
APPLIED PHYSICS LETTERS, 1984, 45 (08) : 910 - 912
[13] SOLID-PHASE EPITAXY OF EVAPORATED AMORPHOUS-SILICON FILMS
MILOSAVLJEVIC, M
JEYNES, C
WILSON, IH
APPLIED PHYSICS LETTERS, 1984, 45 (08) : 874 - 876
[14] SILICON MODULATION DOPED SUPERLATTICES GROWN BY SOLID-PHASE EPITAXY
AHLERS, E
ALLEN, FG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C546 - C547
[15] Boron ripening during solid-phase epitaxy of amorphous silicon
Mattoni, A
Colombo, L
PHYSICAL REVIEW B, 2004, 69 (04):
[16] SURFACTANT-CONTROLLED SOLID-PHASE EPITAXY OF GERMANIUM ON SILICON
OSTEN, HJ
KLATT, J
LIPPERT, G
DIETRICH, B
BUGIEL, E
PHYSICAL REVIEW LETTERS, 1992, 69 (03) : 450 - 453
[17] SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS
ROTH, JA
ANDERSON, CL
APPLIED PHYSICS LETTERS, 1977, 31 (10) : 689 - 691
[18] SOLID-PHASE EPITAXY OF LPCVD AMORPHOUS-SILICON FILMS
HATALIS, MK
GREVE, DW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (10) : 2536 - 2540
[19] Vapour-Phase and Solid-Phase Epitaxy of Silicon on Solid-Phase Crystallised Seed Layers for Solar Cells Application
Li, Wei
Varlamov, Sergey
Jung, Miga
Huang, Jialiang
INTERNATIONAL JOURNAL OF PHOTOENERGY, 2014, 2014
[20] SOLID-PHASE EPITAXY - EFFECTS OF IRRADIATION, DOPANT, AND PRESSURE
CHAKI, TK
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 142 (01): : 153 - 166

← 1 2 3 4 5 →