SUBMILLIMETER PHOTOCONDUCTIVITY OF EPITAXIAL GALLIUM-ARSENIDE CONTAINING ISOVALENT SB IMPURITIES

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作者：
BERMAN, LV
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1983年 / 17卷 / 09期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1004 / 1007
页数：4
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