CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE

被引：120
|
作者：
BROZEL, MR [1 ]
CLEGG, JB [1 ]
NEWMAN, RC [1 ]
机构：
[1] PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1978年 / 11卷 / 09期
关键词：
D O I：
10.1088/0022-3727/11/9/010
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1331 / 1339
页数：9
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