AUTOPROBE TESTING FOR EMITTER-COLLECTOR SPIKES IN MICROWAVE BIPOLAR-TRANSISTORS

被引：0

作者：

TAUSCH, J ^{[1
]}

机构：

[1] TEKTRONIX INC,BEAVERTON,OR 97077

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 11期

关键词：

D O I：

10.1109/T-ED.1975.18271

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1052 / 1053

页数：2

共 50 条

[1] SOURCES OF EMITTER-COLLECTOR SHORTS IN BIPOLAR-TRANSISTORS
LUNNON, ME
ALLISON, DA
STACY, WT
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C93 - C94
[2] SEM AND TEM OBSERVATIONS OF EMITTER-COLLECTOR PIPES IN BIPOLAR-TRANSISTORS
GOWERS, JP
BULL, CJ
ASHBURN, P
JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (MAR): : 329 - 336
[3] THE CHARACTERISTICS OF EMITTER-COLLECTOR SURFACE LEAKAGE CHANNELS IN BIPOLAR-TRANSISTORS
JONES, BK
TRUSCOTT, T
MICROELECTRONICS RELIABILITY, 1987, 27 (05) : 923 - 931
[4] MEASUREMENT OF COLLECTOR AND EMITTER RESISTANCES IN BIPOLAR-TRANSISTORS
PARK, JS
NEUGROSCHEL, A
DELATORRE, V
ZDEBEL, PJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) : 365 - 372
[5] USE OF THE ELECTRON-BEAM-INDUCED CURRENT MODE OF THE SEM FOR OBSERVING EMITTER-COLLECTOR PIPES IN BIPOLAR-TRANSISTORS
ASHBURN, P
BULL, CJ
BEALE, JRA
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3472 - 3477
[6] COLLECTOR-EMITTER OFFSET VOLTAGE IN HETEROJUNCTION BIPOLAR-TRANSISTORS
MAZHARI, B
GAO, GB
MORKOC, H
SOLID-STATE ELECTRONICS, 1991, 34 (03) : 315 - 321
[7] EMITTER-COLLECTOR SHORTS IN BIPOLAR-DEVICES
BARSON, F
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (04) : 505 - 510
[8] EMITTER-COLLECTOR RECIPROCITY OF DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS - A 3-DIMENSIONAL ANALYSIS AND PROOF FOR TRANSISTORS WITH HEAVILY DOPED AND DEGENERATE BASE REGIONS
MOHAMMAD, SN
JOURNAL OF APPLIED PHYSICS, 1988, 63 (04) : 1212 - 1217
[9] DERIVATION OF THE EMITTER COLLECTOR TRANSIT-TIME OF HETEROJUNCTION BIPOLAR-TRANSISTORS
LIU, W
COSTA, D
HARRIS, JS
SOLID-STATE ELECTRONICS, 1992, 35 (04) : 541 - 545
[10] COLLECTOR EMITTER OFFSET VOLTAGE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
HAYES, JR
GOSSARD, AC
WIEGMANN, W
ELECTRONICS LETTERS, 1984, 20 (19) : 766 - 767

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