INFLUENCE OF GROWTH-CONDITIONS ON UNDOPED AND SULFUR-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：11
|
作者：
ILIADIS, A [1 ]
PRIOR, KA [1 ]
STANLEY, CR [1 ]
MARTIN, T [1 ]
DAVIES, GJ [1 ]
机构：
[1] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期
关键词：
D O I：
10.1063/1.337684
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：213 / 218
页数：6
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