GROWTH OVER NONPLANAR SUBSTRATES BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY

We present the growth habits of GaAs and InGaAs quantum wells grown by organometallic molecular-beam epitaxy (OM-MBE) on (100) GaAs substrates with micron-range corrugations aligned along the [011BAR] direction. The growth habits resemble those obtained by molecular-beam epitaxy, but with several obvious differences, which are discussed on the basis of their different growth mechanisms. These differences reduce the importance of the geometric factors for OM-MBE which dominate in MBE. We observe lateral compositional variations in the InGaAs quantum well. The patterned samples exhibit enhanced luminescence efficiency compared to reference flat samples.