SUB-MICRON SILICON EPITAXIAL-FILMS DEPOSITED AT LOW-TEMPERATURES

Submicron silicon epitaxial films have been deposited at low temperatures using only wet chemical cleans for the substrate surface preparation. The layers have been assessed by crystallographic (RHEED) techniques coupled with the electrical measurement of Schottky barrier diodes and transistors fabricated in the layers. In addition, XPS studies of the substrate surface prior to the deposition are also reported. Good quality epitaxial films have been produced at deposition temperatures of 900 degree C and below.