SCANNING ION MICROSCOPY INVESTIGATION OF SEMICONDUCTOR-DEVICES

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作者
GONCHOND, JP
MASCARIN, G
JOURDE, E
PANTEL, R
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O4 [物理学];
学科分类号
0702 ;
摘要
Submicron CMOS devices have been investigated by Scanning Ion Microscopy using a 30 keV Gallium Focused Ion Beam operated in a SEIKO SMI8300 FIB microscope. Application examples in the fields of Process Monitoring and Failure Analysis of VLSI are described.
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页码:183 / 186
页数:4
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