THE USE OF RAPID THERMAL ANNEALING FOR STUDYING TRANSITION-METALS IN SILICON

被引：0

作者：

SPARKS, DR ^{[1
]}

CHAPMAN, RG ^{[1
]}

机构：

[1] GM CORP,DELCO ELECTR DIV,DETROIT,MI 48202

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中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

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页码：C108 / C108

页数：1

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