CHARACTERISTICS OF DEFECT FORMATION IN SILICON CONTAINING ISOVALENT TIN IMPURITIES

被引：0
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作者：
SOLOVEVA, EV
LAZAREVA, GV
LEIFEROV, BM
LOTOTSKII, AG
MILVIDSKII, MG
RYTOVA, NS
TVIROVA, EA
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 09期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：985 / 986
页数：2
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