CHARACTERISTICS OF DEFECT FORMATION IN SILICON CONTAINING ISOVALENT TIN IMPURITIES

被引：0
|
作者：
SOLOVEVA, EV
LAZAREVA, GV
LEIFEROV, BM
LOTOTSKII, AG
MILVIDSKII, MG
RYTOVA, NS
TVIROVA, EA
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：985 / 986
页数：2
相关论文
共 50 条
  • [21] INFLUENCE OF ISOVALENT IMPURITIES ON THE STRUCTURE AND PROPERTIES OF AMORPHOUS-SILICON
    PAVLOV, DA
    KHOKHLOV, AF
    KUDRYAVTSEVA, RV
    ERSHOV, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (12): : 1380 - 1383
  • [22] Interstitial-related reactions in silicon doped with isovalent impurities
    Khirunenko, LI
    Kobzar, OO
    Pomozov, YV
    Sosnin, MG
    Tripachko, MO
    Abrosimov, NV
    Riemann, H
    PHYSICA B-CONDENSED MATTER, 2003, 340 : 546 - 550
  • [23] THE ROLE OF GROUP-V IMPURITIES IN DEFECT FORMATION IN IRRADIATED SILICON
    AWADELKARIM, OO
    HENRY, A
    MONEMAR, B
    LINDSTROM, JL
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 120 (02): : 539 - 546
  • [24] FORMATION OF COMPLEXES CONTAINING HYDROGEN AND ACCEPTOR OR DONOR IMPURITIES IN SILICON
    GELFAND, RB
    MUDRYI, AV
    PUSHKARCHUK, AL
    ULYASHIN, AG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (08): : 899 - 901
  • [25] Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin
    Angeletos, T.
    Sgourou, E. N.
    Andrianakis, A.
    Diamantopoulou, A.
    Chroneos, A.
    Londos, C. A.
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (01)
  • [26] PHOTOSENSITIVITY AND CONDUCTIVITY OF AMORPHOUS-SILICON DOPED WITH ISOVALENT GERMANIUM IMPURITIES
    KHOKHLOV, AF
    ERSHOV, AV
    MASHIN, AI
    MORDVINOVA, YA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (10): : 1156 - 1157
  • [27] Defect formation mechanisms for ZnSe with isovalent oxygen impurity
    Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine
    不详
    Telecommun Radio Eng, 2007, 13 (1205-1211):
  • [28] Mechanisms of defect formation for ZnSe with isovalent oxygen impurity
    Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine
    不详
    Telecommun Radio Eng, 2007, 5 (465-471):
  • [29] DIFFUSION OF IMPURITIES IN SILICON AND DEFECT REACTIONS
    BISIO, GM
    DEPASQUALE, S
    GRAGLIA, PG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C91 - C91
  • [30] CALCULATIONS OF CHARACTERISTICS OF IMPURITY-DEFECT COMPLEXES IN SILICON AT HIGH CONCENTRATIONS OF IMPURITIES
    Balabay, R. M.
    Kiv, A. E.
    Moiseenko, N. V.
    UKRAINIAN JOURNAL OF PHYSICS, 2005, 50 (03): : 256 - 260
12345