ALUMINUM IN HYDROGENATED AMORPHOUS-GERMANIUM

被引：2
|
作者：
TESSLER, LR [1 ]
机构：
[1] UNICAMP,IFGW,DFA,BR-13081 CAMPINAS,SP,BRAZIL
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1993年 / 67卷 / 04期
基金：
巴西圣保罗研究基金会;
关键词：
D O I：
10.1080/09500839308240939
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of aluminium on the electro-optical properties of high quality sputtered hydrogenated amorphous germanium are reported. Two distinct effects are found: at low concentrations, the aluminium atoms act as active p-type dopants making the Fermi level shift towards mid-gap compensating the intrinsically n-type material. At higher concentrations, a hydrogenated germanium-aluminium alloy is formed. The optical gap shrinks and transport is probably dominated by holes.
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页码：273 / 278
页数：6
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