HYDROGENATED AMORPHOUS-GERMANIUM AND ITS ALLOYS

This paper refers to the opto-electronic properties of hydrogenated amorphous germanium and its alloys (deposited by the RF-sputtering method). It is shown that enormous progress has been made in the optimization of a-Ge:H films, even though they are not yet fully electronic quality materials. The problems of material stability and doping are discussed in the light of recent results. The important issues of hydrogenated Ge-Sn and Ge-N alloys are presented, as well as recent results in the a-Ge:H device area.