ANNEALING OF AMORPHOUS LAYER IN S+ IMPLANTED GAAS BY ELECTRON-BEAM INSIDE THE ELECTRON-MICROSCOPE

被引：0
|
作者：
RAI, AK
BHATTACHARYA, RS
机构：
来源：
JOURNAL OF MICROSCOPY-OXFORD | 1985年 / 139卷 / SEP期
关键词：
D O I：
10.1111/j.1365-2818.1985.tb02647.x
中图分类号：
TH742 [显微镜];
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页码：313 / 320
页数：8
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