ON THE MORPHOLOGY AND COMPOSITION OF THE OXIDIZED LAYER IN SI3N4-BASED MATERIALS

被引：0
|
作者：
PENI, F
CRAMPON, J
DUCLOS, R
机构：
来源：
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1993年 / 163卷 / 01期
关键词：
D O I：
10.1016/0921-5093(93)90590-B
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The morphology and composition of the oxidized layer formed at high temperature in Y2O3-Al2O3 doped Si3N4-based materials were investigated under the same oxidation conditions. The influence of TiN and TiC dispersoids on the development of this layer was studied with particular attention to the protective glassy film.
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页码：L5 / L7
页数：3
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