ELECTRICAL-PROPERTIES OF TELLURIUM-DOPED GALLIUM-ARSENIDE THIN-FILMS

被引：0

作者：

ISLAM, MN

MITRA, SK

机构：

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1987年 / 6卷 / 02期

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D O I：

10.1007/BF01728968

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：151 / 153

页数：3

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[1] NATURE OF INCLUSIONS IN HEAVILY TELLURIUM-DOPED GALLIUM-ARSENIDE
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[J]. JOURNAL OF MATERIALS SCIENCE, 1974, 9 (09) : 1483 - 1492
[2] PHOTO-LUMINESCENCE OF TELLURIUM-DOPED GALLIUM-ARSENIDE
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (05): : 579 - 580
[3] ELECTRICAL-PROPERTIES OF EPITAXIAL SILICON-DOPED GALLIUM-ARSENIDE FILMS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (03): : 325 - 328
[4] THIN-FILMS ON GALLIUM-ARSENIDE
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[J]. ELECTRONICS AND POWER, 1976, 22 (11-1): : 765 - 767
[5] ELECTRICAL-PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE FILMS DOPED WITH ISOVALENT SB AND IN IMPURITIES
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[6] ELECTRICAL-PROPERTIES OF GALLIUM-ARSENIDE INGOTS
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[J]. ACTA ELECTRONICA, 1983, 25 (02): : 123 - 132
[7] DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE
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GIBBONS, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5181 - 5191
[8] ELECTRICAL-PROPERTIES OF NUCLEAR DOPED EPITAXIAL LAYERS OF GALLIUM-ARSENIDE
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[J]. DOKLADY AKADEMII NAUK BELARUSI, 1992, 36 (11-12): : 982 - 984
[9] ELECTRICAL-PROPERTIES OF THIN INTERMETALLIC PLATINUM-GALLIUM FILMS GROWN BY MBE ON GALLIUM-ARSENIDE AND SILICON
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[J]. CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 291 - 296
[10] ELECTRICAL AND ELECTRON MICROSCOPE STUDIES OF ANNEALING OF TELLURIUM-DOPED GALLIUM ARSENIDE
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[J]. PHILOSOPHICAL MAGAZINE, 1971, 23 (185): : 1077 - &

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