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- [6] INFLUENCE OF INDIUM ON THE ELECTRICAL-PROPERTIES OF GALLIUM-ARSENIDE SINGLE-CRYSTALS[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 366 - 367SOLOVEVA, EVMILVIDSKII, MGOSVENSKII, VBBOLSHEVA, YNGRIGOREV, YATSYGANOV, VP
- [7] ELECTRICAL-PROPERTIES OF EPITAXIAL SILICON-DOPED GALLIUM-ARSENIDE FILMS[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (03): : 325 - 328MILVIDSKII, MGSOLOVEVA, EV
- [8] ELECTRICAL-PROPERTIES OF TELLURIUM-DOPED GALLIUM-ARSENIDE THIN-FILMS[J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1987, 6 (02) : 151 - 153ISLAM, MNMITRA, SK
- [9] ELECTRICAL-PROPERTIES OF GALLIUM-ARSENIDE LAYERS DOPED BY IMPLANTATION OF CARBON-IONS[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 971 - 974DANILOV, YAKARMANOV, VTPAVLOV, PVPITIRIMOVA, EA
- [10] INTERFACIAL ELECTRICAL-PROPERTIES OF DIAMOND-LIKE CARBON GALLIUM-ARSENIDE HETEROSTRUCTURES[J]. DIAMOND AND RELATED MATERIALS, 1993, 2 (12) : 1459 - 1463IYER, SBHARSHAVARDHAN, KSKUMAR, V