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- [5] ELECTRICAL-PROPERTIES OF TELLURIUM-DOPED GALLIUM-ARSENIDE THIN-FILMS[J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1987, 6 (02) : 151 - 153ISLAM, MNMITRA, SK
- [6] ELECTRICAL-PROPERTIES OF GALLIUM-ARSENIDE INGOTS[J]. ACTA ELECTRONICA, 1983, 25 (02): : 123 - 132MARTIN, SJACOB, G
- [7] ELECTRICAL-PROPERTIES OF THIN INTERMETALLIC PLATINUM-GALLIUM FILMS GROWN BY MBE ON GALLIUM-ARSENIDE AND SILICON[J]. CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 291 - 296SADWICK, LPOSTROM, RMWU, BJWANG, KLWILLIAMS, RS
- [8] PHOTOLUMINESCENCE AND ELECTRICAL-PROPERTIES OF NEUTRON TRANSMUTATION-DOPED GALLIUM-ARSENIDE[J]. DOKLADY AKADEMII NAUK BELARUSI, 1987, 31 (08): : 695 - 698KORSHUNOV, FPPROKHORENKO, TAKURILOVICH, NFKOLIN, NGSOBOLEV, NASHERAUKHOV, VA
- [9] ON SILICON-DOPED GALLIUM-ARSENIDE UNDER HYDROSTATIC-PRESSURE[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1994, 181 (02): : K45 - K48POTHIRAJ, RRAMACHANDRAN, K
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