ELEMENTARY AMBIPOLAR FIELD-EFFECT TRANSISTOR MODEL

被引：25
|
作者：
PFLEIDERER, H
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 01期
关键词：
D O I：
10.1109/T-ED.1986.22451
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：145 / 147
页数：3
相关论文
共 50 条
  • [21] Ambipolar Transport in an Electrochemically Gated Single-Molecule Field-Effect Transistor
    Diez-Perez, Ismael
    Li, Zhihai
    Guo, Shaoyin
    Madden, Christopher
    Huang, Helin
    Che, Yanke
    Yang, Xiaomei
    Zang, Ling
    Tao, Nongjian
    [J]. ACS NANO, 2012, 6 (08) : 7044 - 7052
  • [22] An Ambipolar Superconducting Field-Effect Transistor Operating above Liquid Helium Temperature
    Kawaguchi, Genta
    Bardin, Audrey A.
    Suda, Masayuki
    Uruichi, Mikio
    Yamamoto, Hiroshi M.
    [J]. ADVANCED MATERIALS, 2019, 31 (02)
  • [23] Ambipolar field-effect transistor based on organic-inorganic hybrid structure
    Nakanotani, Hajime
    Yahiro, Masayuki
    Adachi, Chihaya
    Yano, Koki
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (26)
  • [24] Ambipolar pentacene field-effect transistor with double-layer organic insulator
    Kwak, Jeong-Hun
    Baek, Heume-Il
    Lee, Changhee
    [J]. ORGANIC FIELD-EFFECT TRANSISTORS V, 2006, 6336
  • [25] High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes
    Bisri, Satria Zulkarnaen
    Gao, Jia
    Derenskyi, Vladimir
    Gomulya, Widianta
    Iezhokin, Igor
    Gordiichuk, Pavlo
    Herrmann, Andreas
    Loi, Maria Antonietta
    [J]. ADVANCED MATERIALS, 2012, 24 (46) : 6147 - 6152
  • [26] Subthreshold modeling of ambipolar organic field-effect transistor based on field-dependent mobility
    Katiyar, Suleshma
    Jogi, Jyotika
    [J]. MATERIALS TODAY-PROCEEDINGS, 2022, 67 : 663 - 667
  • [27] Ambipolar Phosphorene Field Effect Transistor
    Das, Saptarshi
    Demarteau, Marcel
    Roelofs, Andreas
    [J]. ACS NANO, 2014, 8 (11) : 11730 - 11738
  • [28] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR
    DRUMMOND, TJ
    MORKOC, H
    LEE, K
    SHUR, M
    [J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341
  • [29] The Behavioural Model of Graphene Field-effect Transistor
    Luszczek, Maciej
    Turzynski, Marek
    Swisulski, Dariusz
    [J]. INTERNATIONAL JOURNAL OF ELECTRONICS AND TELECOMMUNICATIONS, 2020, 66 (04) : 753 - 758
  • [30] A Compact Model of Ferroelectric Field-Effect Transistor
    Tung, Chien-Ting
    Pahwa, Girish
    Salahuddin, Sayeef
    Hu, Chenming
    [J]. IEEE ELECTRON DEVICE LETTERS, 2022, 43 (08) : 1363 - 1366
12345