共 50 条
- [1] Mitigation of Single Event Latchup in High-density SRAMs [J]. PROCEEDINGS OF THE 2021 IEEE CONFERENCE OF RUSSIAN YOUNG RESEARCHERS IN ELECTRICAL AND ELECTRONIC ENGINEERING (ELCONRUS), 2021, : 2014 - 2019
- [2] SINGLE EVENT EFFECTS IN HIGH-DENSITY CMOS SRAMS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1632 - 1636
- [5] High-density processing of powders [J]. INTERNATIONAL JOURNAL OF POWDER METALLURGY, 2005, 41 (05): : 31 - 36
- [7] HIGH-DENSITY PLASMAS FOR DRY PROCESSING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C126 - C127
- [8] Low-voltage and high-speed operation for high-density SRAMs by BBC cell [J]. INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 859 - 862
- [9] Thermal-to-high-energy neutron SEU characterization of commercial SRAMs [J]. 2021 IEEE NUCLEAR AND SPACE RADIATION EFFECTS CONFERENCE (NSREC) / 2021 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), 2021, : 32 - 36
- [10] A hierarchical sensing scheme (HSS) of high-density and low-voltage operation SRAMs [J]. 1997 SYMPOSIUM ON VLSI CIRCUITS: DIGEST OF TECHNICAL PAPERS, 1997, : 79 - 80