ON THE SUITABILITY OF NONHARDENED HIGH-DENSITY SRAMS FOR SPACE APPLICATIONS

被引:43
|
作者
KOGA, R
CRAIN, WR
CRAWFORD, KB
LAU, DD
PINKERTON, SD
YI, BK
CHITTY, R
机构
[1] FAIRCHILD SPACE & ELECTR CO,GERMANTOWN,MD 20874
[2] CTA,ROCKVILLE,MD 20852
关键词
D O I
10.1109/23.124139
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Several non-radiation-hardened high density static RAMs (SRAMs) were tested for susceptibility to single event upset (SEU) and latchup. Test results indicate that at present only a few such device types are suitable for use in space applications. Several additional factors such as susceptibility to multiple-bit upsets and to radiation induced permanent damage need to be taken into consideration before these device types can be recommended. One non-hardened SRAM device type has recently been used on a low-Earth orbit satellite, enabling the upset rate measured in space to be compared to that predicted from ground-based testing.
引用
收藏
页码:1507 / 1513
页数:7
相关论文
共 50 条
  • [1] OBSERVATIONS OF SINGLE-EVENT UPSETS IN NONHARDENED HIGH-DENSITY SRAMS IN SUN-SYNCHRONOUS ORBIT
    UNDERWOOD, CI
    WARD, JW
    DYER, CS
    SIMS, AJ
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) : 1817 - 1827
  • [2] Mitigation of Single Event Latchup in High-density SRAMs
    Panyshev, Kirill A.
    Lagaev, Dmitriy A.
    [J]. PROCEEDINGS OF THE 2021 IEEE CONFERENCE OF RUSSIAN YOUNG RESEARCHERS IN ELECTRICAL AND ELECTRONIC ENGINEERING (ELCONRUS), 2021, : 2014 - 2019
  • [3] PROCESSING ENHANCED SEU TOLERANCE IN HIGH-DENSITY SRAMS
    FU, JS
    LEE, KH
    KOGA, R
    KOLANSKI, WA
    WEAVER, HT
    BROWNING, JS
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1322 - 1325
  • [4] SINGLE EVENT EFFECTS IN HIGH-DENSITY CMOS SRAMS
    SHIONO, N
    SAKAGAWA, Y
    SEKIGUCHI, M
    SATO, K
    SUGAI, I
    HATTORI, T
    HIRAO, Y
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1632 - 1636
  • [5] A STACKED-CMOS CELL TECHNOLOGY FOR HIGH-DENSITY SRAMS
    UEMOTO, Y
    FUJII, E
    NAKAMURA, A
    SENDA, K
    TAKAGI, H
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (10) : 2359 - 2363
  • [6] Olive cultivars suitability for high-density orchards
    Larbi, A.
    Ayadi, M.
    Ben Dhiab, A.
    Msallem, M.
    Caballero, J. M.
    [J]. SPANISH JOURNAL OF AGRICULTURAL RESEARCH, 2011, 9 (04) : 1279 - 1286
  • [7] Low-voltage and high-speed operation for high-density SRAMs by BBC cell
    Maki, Y
    Honda, H
    Morimoto, R
    Sato, H
    Nagaoka, H
    Wada, T
    Arita, Y
    Tsutsumi, K
    Miyoshi, H
    [J]. INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 859 - 862
  • [8] High-density switching for automotive applications
    Semancik, JN
    [J]. EE-EVALUATION ENGINEERING, 2002, 41 (11): : 38 - +
  • [9] TECHNOLOGY AND APPLICATIONS OF HIGH-DENSITY SENSORS
    KHOSLA, RP
    [J]. MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 615 - 622
  • [10] Engineering ReRAM for high-density applications
    Calderoni, Alessandro
    Sills, Scott
    Cardon, Chris
    Faraoni, Emiliano
    Ramaswamy, Nirmal
    [J]. MICROELECTRONIC ENGINEERING, 2015, 147 : 145 - 150