A hierarchical sensing scheme (HSS) of high-density and low-voltage operation SRAMs

被引：0
|
作者：
Haraguchi, Y
Wada, T
Arita, Y
机构：
来源：
1997 SYMPOSIUM ON VLSI CIRCUITS: DIGEST OF TECHNICAL PAPERS | 1997年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper proposes a new hierarchical sensing scheme (HSS) that realizes stability in READ/WRITE operation for a small SRAM memory cell. By adopting the HSS, high-density and low-voltage operation SRAMs with a small die-size, which is suitable for mobile multi-media devices, can be realized. The HSS makes best use of Cb/Cs relation in the circuit design. The simulation show that the HSS SRAM functions satisfactory with a cell ratio of 1.5 (< 50% of conventional) at Vcc = 3V and 2.5 at Vcc = 1.8V.
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页码：79 / 80
页数：2
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