TELLURIUM-IMPLANTED N+ LAYERS IN GAAS

被引：17
|
作者：
PASHLEY, RD
WELCH, BM
机构：
[1] CALTECH,PASADENA,CA 91109
[2] ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360
来源：
SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 11期
关键词：
D O I：
10.1016/0038-1101(75)90115-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：977 / 981
页数：5
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