STUDY BY DDX AND SIMS OF EPVOM GROWN GA1-XALXAS

被引：0
|
作者：
LEYCURAS, A
GRENET, JC
FREUNDLICH, A
GRATTEPAIN, C
机构：
来源：
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1988年 / 43卷 / 241期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：201 / 202
页数：2
相关论文
共 50 条
  • [21] REFRACTIVE-INDEX OF GA1-XALXAS
    AFROMOWITZ, MA
    SOLID STATE COMMUNICATIONS, 1974, 15 (01) : 59 - 63
  • [22] SOLID COMPOSITION AND GROWTH-RATE OF GA1-XALXAS GROWN EPITAXIALLY BY MOCVD
    TAKAHASHI, Y
    SOGA, T
    SAKAI, S
    UMENO, M
    HATTORI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (09): : 1357 - 1360
  • [23] Characterization of MBE-grown Ga1-xAlxAs alloy films by Raman scattering
    Hou, YT
    Feng, ZC
    Li, MF
    Chua, SJ
    SURFACE AND INTERFACE ANALYSIS, 1999, 28 (01) : 163 - 165
  • [24] SILICON IN LPE-GROWN GA1-XALXAS - EFFECT OF ARSENIC SOLUTION CONCENTRATION
    RADO, WG
    CRAWLEY, RL
    JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) : 4816 - &
  • [25] STUDY OF SURFACE PHONON POLARITONS IN GA1-XALXAS MIXED COMPOUNDS
    GORBUNOVA, TN
    DMITRUK, NL
    FIZIKA TVERDOGO TELA, 1977, 19 (08): : 1277 - 1281
  • [26] DAMPING OF OPTICAL PHONONS IN GA1-XALXAS ALLOYS
    JUSSERAND, B
    MOLLOT, F
    QUAGLIANO, LG
    LEROUX, G
    PLANEL, R
    PHYSICAL REVIEW LETTERS, 1991, 67 (20) : 2803 - 2806
  • [27] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS
    AFROMOWITZ, MA
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1292 - 1294
  • [28] A GA1-XALXAS MONOLITHIC OPTO-ISOLATOR
    ROEDEL, RJ
    DUTT, BV
    ELHAMAMSY, M
    KERAMIDAS, VG
    SAUL, RH
    CASSIDAY, DR
    ELECTRON DEVICE LETTERS, 1980, 1 (02): : 15 - 17
  • [29] NUCLEATION AND GROWTH OF GA1-XALXAS ON (111)GAP
    ASTLES, MG
    ROWLAND, MC
    JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 142 - 147
  • [30] MULTIBARRIER TUNNELING IN GA1-XALXAS/GAAS HETEROSTRUCTURES
    VASSELL, MO
    LEE, J
    LOCKWOOD, HF
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5206 - 5213
12345