SOLID COMPOSITION AND GROWTH-RATE OF GA1-XALXAS GROWN EPITAXIALLY BY MOCVD

被引：18

作者：

TAKAHASHI, Y ^{[1
]}

SOGA, T ^{[1
]}

SAKAI, S ^{[1
]}

UMENO, M ^{[1
]}

HATTORI, S ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 09期

关键词：

D O I：

10.1143/JJAP.22.1357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1357 / 1360

页数：4

共 50 条

[1] VARIATION OF SOLID COMPOSITION DURING LPE GROWTH OF GA1-XALXAS
RADO, WG
CRAWLEY, RL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) : 1779 - &
[2] CHARACTERIZATION OF MOCVD GROWN GA1-XALXAS FOR DOUBLE HETEROSTRUCTURE LASERS
GLEW, RW
GARRETT, B
BRIGGS, ATR
THRUSH, EJ
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (07) : 701 - 705
[3] COMPOSITION OF GA1-XALXAS GROWN FROM GA-RICH SOLUTIONS AS A FUNCTION OF GROWTH TEMPERATURE AND SOLUTION COMPOSITION
RADO, WG
JOHNSON, WJ
CRAWLEY, RL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 652 - &
[4] GAAS/GA1-XALXAS AND GA1-XALXAS/GAAS HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY
ALEXANDRE, F
LIEVIN, JL
MEYNADIER, MH
DELALANDE, C
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 454 - 461
[5] MOCVD GROWTH OF GAAS/GA1-XALXAS EPITAXIAL LAYERS FOR MONOLITHIC OPTOELECTRONIC DEVICES
JONES, MW
FORBES, N
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 466 - 473
[6] NEAR-INFRARED HIGH-POWER LEDS WITH GA1-XALXAS EPITAXIALLY GROWN JUNCTIONS
KURATA, K
ONO, Y
MORIOKA, M
ITO, K
MORI, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (07) : 525 - 531
[7] SOLUTION GROWN GA1-XALXAS SUPERLATTICE STRUCTURES
WOODALL, JM
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 12 (01) : 32 - +
[8] IMPROVEMENT OF CRYSTAL COMPOSITION IN GA1-XALXAS LPE LAYERS GROWN UNDER CONDITIONS OF CONSTANT COOLING RATE
DOI, A
HIRAO, M
ITO, R
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (03) : 503 - 507
[9] DOPING OF GA1-XALXAS GROWN BY LPE WITH SI AND GE
SWAMINATHAN, V
STURGE, MD
ZILKO, JL
SCHUMAKER, NE
WAGNER, WR
GAW, CA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) : 1563 - 1566
[10] STUDY BY DDX AND SIMS OF EPVOM GROWN GA1-XALXAS
LEYCURAS, A
GRENET, JC
FREUNDLICH, A
GRATTEPAIN, C
[J]. VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1988, 43 (241): : 201 - 202

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