SOLID COMPOSITION AND GROWTH-RATE OF GA1-XALXAS GROWN EPITAXIALLY BY MOCVD

被引：18
|
作者：
TAKAHASHI, Y [1 ]
SOGA, T [1 ]
SAKAI, S [1 ]
UMENO, M [1 ]
HATTORI, S [1 ]
机构：
[1] NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 09期
关键词：
D O I：
10.1143/JJAP.22.1357
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1357 / 1360
页数：4
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