共 50 条
- [31] INVESTIGATION OF CAPACITANCE CHARACTERISTICS OF P-N JUNCTIONS IN CDTE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (04): : 451 - +
- [35] INVESTIGATION OF CURRENT-VOLTAGE CHARACTERISTICS OF DIFFUSED P-N JUNCTIONS IN GAAS0.65P0.35 SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 206 - &
- [36] ELECTROLUMINESCENCE CHARACTERISTICS OF EPITAXIAL GaAs p-n JUNCTIONS WITH DELIBERATELY COMPENSATED p- AND n-TYPE REGIONS. 1973, 6 (10): : 1726 - 1730
- [37] Ultraviolet photodetector based on single GaN nanorod p-n junctions MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (5-7): : 886 - 888
- [38] QUANTUM EFFICIENCY OF CDTE P-N JUNCTIONS IN THE ULTRAVIOLET PART OF THE SPECTRUM SOVIET PHYSICS-SOLID STATE, 1960, 2 (04): : 536 - 536