Ultraviolet photodetector based on single GaN nanorod p-n junctions

被引：29
|
作者：
Son, M. S.
Im, S. I.
Park, Y. S.
Park, C. M.
Kang, T. W.
Yoo, K. -H. [1 ]
机构：
[1] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[2] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
来源：
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2006年 / 26卷 / 5-7期
关键词：
photonic; ultraviolet photo detector; GaN nanorod; PA-MBE;
D O I：
10.1016/j.msec.2005.09.089
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：886 / 888
页数：3
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