Ultraviolet photodetector based on single GaN nanorod p-n junctions

被引：29
|
作者：
Son, M. S.
Im, S. I.
Park, Y. S.
Park, C. M.
Kang, T. W.
Yoo, K. -H. [1 ]
机构：
[1] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[2] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
来源：
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2006年 / 26卷 / 5-7期
关键词：
photonic; ultraviolet photo detector; GaN nanorod; PA-MBE;
D O I：
10.1016/j.msec.2005.09.089
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：886 / 888
页数：3
相关论文
共 50 条
  • [41] Deep levels in KOH etched and MOCVD regrown GaN p-n junctions
    Johnstone, D
    Dogan, S
    Moon, YT
    Fu, Y
    Xu, J
    Yun, F
    Leach, J
    Morkoç, H
    Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2454 - 2457
  • [42] Improvement of optical performance of ZnO/GaN p-n junctions with an InGaN interlayer
    Wang, T.
    Wu, H.
    Wang, Z.
    Chen, C.
    Liu, C.
    APPLIED PHYSICS LETTERS, 2012, 101 (16)
  • [43] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
    SHOCKLEY, W
    BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
  • [44] GROWTH OF SILICON SINGLE CRYSTALS AND OF SINGLE CRYSTAL SILICON P-N JUNCTIONS
    TEAL, GK
    BUEHLER, E
    PHYSICAL REVIEW, 1952, 87 (01): : 190 - 190
  • [45] Parasitic p-n junctions formed at V-pit defects in p-GaN
    Vergeles, P. S.
    Yakimov, E. B.
    Polyakov, A. Y.
    Shchemerov, I. V.
    Chernykh, A. V.
    Vasilev, A. A.
    Kochkova, A. I.
    Lee, In-Hwan
    Pearton, Stephen J.
    JOURNAL OF APPLIED PHYSICS, 2021, 129 (15)
  • [46] Vertical Schottky ultraviolet photodetector based on graphene and top-down fabricated GaN nanorod arrays
    Zhang, Xuemin
    Yan, Changling
    Yang, Jinghang
    Pang, Chao
    Yue, Yunzhen
    Zeng, Chunhong
    Zhang, Baoshun
    JOURNAL OF SEMICONDUCTORS, 2022, 43 (06)
  • [47] ULTRAVIOLET MSM PHOTODETECTOR BASED ON GaN MICROMACHINING
    Mueller, A.
    Konstantinidis, G.
    Dragoman, M.
    Neculoiu, D.
    Dinescu, A.
    Androulidaki, M.
    Kayambaki, M.
    Stavrinidis, A.
    Vasilache, D.
    Buiculescu, C.
    Petrini, I.
    Anton, C.
    Dascalu, D.
    Kostopoulos, A.
    CAS: 2008 INTERNATIONAL SEMICONDUCTOR CONFERENCE, PROCEEDINGS, 2008, : 91 - +
  • [48] Ultraviolet electroluminescence from hetero p-n junction between a single ZnO microsphere and p-GaN thin film
    Tetsuyama, Norihiro
    Fusazaki, Koshi
    Mizokami, Yasuaki
    Shimogaki, Tetsuya
    Higashihata, Mitsuhiro
    Nakamura, Daisuke
    Okada, Tatsuo
    OPTICS EXPRESS, 2014, 22 (08): : 10026 - 10031
  • [49] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
    SAH, CT
    NOYCE, RN
    SHOCKLEY, W
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
  • [50] ON THE CAPACITIVE CHARACTERISTICS OF P-N JUNCTIONS
    VUL, BM
    SOVIET PHYSICS-SOLID STATE, 1961, 3 (01): : 148 - 149
12345