Ultraviolet photodetector based on single GaN nanorod p-n junctions

The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination. (c) 2005 Elsevier B.V. All rights reserved.