EFFECT OF OXIDE HYDRATION ON SURFACE POTENTIAL OF OXIDIZED P-TYPE SILICON

被引：0
|
作者：
KUPER, AB
NICOLLIAN, EH
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C193 / C193
页数：1
相关论文
共 50 条
  • [31] PIEZO-HALL EFFECT IN P-TYPE SILICON
    TARASIK, MI
    SHVARKOV, DS
    YANCHENKO, AM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (06): : 674 - 675
  • [32] ELECTROLYTIC HYDROGENATION OF P-TYPE SILICON BULK AND SURFACE MODIFICATIONS
    DEMIERRY, P
    ETCHEBERRY, A
    AUCOUTURIER, M
    PHYSICA B, 1991, 170 (1-4): : 124 - 128
  • [33] Sensitive Photodetection Based on the Surface States of p-Type Silicon
    Zhou, Bowei
    Gan, Zhikai
    Dong, Anhua
    Wang, Sipei
    Wang, Hui
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (02) : 236 - 239
  • [34] SURFACE-BARRIER PARTICLE COUNTERS OF P-TYPE SILICON
    LAZAREV, VA
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1965, (04): : 977 - &
  • [35] Surface and structural investigations on laser irradiated P-type silicon
    Latif, A.
    Rafiq, M. S.
    Bhatti, K. A.
    Mahmood, N.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2014, 169 (06): : 506 - 512
  • [36] P-TYPE SURFACE LAYERS IN ION-BOMBARDED SILICON
    AMADEI, L
    GERETH, R
    QUEISSER, HJ
    JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1537 - &
  • [37] SATURATION OF AC SURFACE PHOTOVOLTAGES DUE TO PHOTOCAPACITANCES IN A STRONGLY-INVERTED OXIDIZED P-TYPE SILICON-WAFER
    MUNAKATA, C
    HONMA, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (04): : 564 - 567
  • [38] SATURATION OF AC SURFACE PHOTOVOLTAGES DUE TO PHOTOCAPACITANCES IN A STRONGLY-INVERTED OXIDIZED p-TYPE SILICON WAFER.
    Munakata, Chusuke
    Honma, Noriaki
    1600, (26):
  • [39] EFFECTS OF CRYSTALLOGRAPHIC ORIENTATION ON MOBILITY SURFACE STATE DENSITY AND NOISE IN P-TYPE INVERSION LAYERS ON OXIDIZED SILICON SURFACES
    SATO, T
    TAKEISHI, Y
    HARA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (05) : 588 - +
  • [40] EFFECT OF ATOMIC HYDROGEN TREATMENT ON PASSIVATION QUALITY OF ALUMINUM OXIDE FOR P-TYPE CRYSTALLINE SILICON
    Irikawa, Junpei
    Kida, Shuhei
    Miyajima, Shinsuke
    Yamada, Akira
    Konagai, Makoto
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 3181 - 3184
12345