NONEQUILIBRIUM GENERATION-RECOMBINATION NOISE IN INGAAS/INP PHOTODIODES

被引：1
|
作者：
RIMINIDORING, M
HANGLEITER, A
WINKLER, S
KLOTZER, N
机构：
[1] 4. Physikalisches Institut, Universität Stuttgart, Stuttgart 80, W-7000
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 54卷 / 02期
关键词：
D O I：
10.1007/BF00323897
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on temperature (77 to 300 K) and voltage dependent low frequency (100 Hz to 100 kHz) noise behavior of InGaAs/InP photodiodes in non-equilibrium steady state. In addition to common white, 1/f, and Lorentz noise we are able to observe for the first time minima and maxima in the photocurrent noise spectra. The recombination of a pair of free carriers through a recombination center at the heterointerface provides the correlation between the electron and hole ensembles necessary to explain the observed noise reduction.
引用
收藏
页码：120 / 123
页数：4
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