Generation-Recombination Effect in High-Temperature HgCdTe Heterostructure Nonequilibrium Photodiodes

The dark current of near-room-temperature long-wavelength heterojunction photodiodes was studied. The dark current of the devices is much greater than that calculated from the Auger generation mechanisms. A model of trap- assisted tunneling via traps located at dislocation cores is proposed as the mechanism of enhanced thermal generation of charge carriers in reverse-biased diodes. Field-induced reduction of trap activation energies can increase thermal generation and create conditions for tunneling currents. The model qualitatively explains experimental current−voltage characteristics of the diodes assuming a dislocation density of approximately 108 cm−2 at the graded gap interface between absorber and contact regions of the photodiode.