Numerical estimations of carrier generation-recombination processes and photon recycling effect in 3-μm n-on-p HgCdTe photodiodes

被引：21

作者：

Jozwikowski, Krzysztof ^{[1
]}

Kopytko, Malgorzata ^{[1
]}

Rogalski, Antoni ^{[1
]}

机构：

[1] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland

来源：

OPTICAL ENGINEERING | 2011年 / 50卷 / 06期

关键词：

photon recycling; generation-recombination processes; n-on-p HgCdTe photodiodes; RADIATIVE LIFETIME; QUANTUM EFFICIENCY; DIFFUSION LENGTH; SEMICONDUCTORS;

D O I：

10.1117/1.3572167

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An enhanced original computer program is applied to explain in detail the influence of the photon recycling effect on carrier lifetime in a selected 3-mu m n-on-p HgCdTe photodiode structure. The computer program is based on solution of carrier and photon transport equations for practical photodiode design. As a result, both distribution of thermal carrier generation and recombination rates and spatial photon density distribution in photodiode structures have been obtained. It is clearly shown that the photon recycling effect drastically limits the influence of radiative recombination on performance of HgCdTe photodiodes. A general conclusion confirms previous Humpreys' ascertainment that the radiative recombination, although of fundamental nature, does not limit the ultimate performance of HgCdTe photodiodes. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.3572167]

引用

页数：8

共 4 条

[1] Numerical Estimations of Carrier Generation-Recombination Processes and the Photon Recycling Effect in HgCdTe Heterostructure Photodiodes
Jozwikowski, K.
Kopytko, M.
Rogalski, A.
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (10) : 2766 - 2774
[2] Numerical Estimations of Carrier Generation–Recombination Processes and the Photon Recycling Effect in HgCdTe Heterostructure Photodiodes
K. Jóźwikowski
M. Kopytko
A. Rogalski
[J]. Journal of Electronic Materials, 2012, 41 : 2766 - 2774
[3] Photon recycling effect in small pixel p-i-n HgCdTe long wavelength infrared photodiodes
Kopytko, M.
Joiwikowski, K.
Martyniuk, P.
Rogalski, A.
[J]. INFRARED PHYSICS & TECHNOLOGY, 2019, 97 : 38 - 42
[4] Electro-Optical Characteristics of MWIR and LWIR Planar Hetero-Structure P+n HgCdTe Photodiodes limited by Intrinsic Carrier Recombination processes
DeWames, R.
Maloney, P.
Billman, C.
Pellegrino, J.
[J]. INFRARED TECHNOLOGY AND APPLICATIONS XXXVII, 2011, 8012

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