DIFFUSION AND DRIFT OF SI DOPANTS IN DELTA-DOPED N-TYPE ALXGA1-XAS

被引：60
|
作者：
SCHUBERT, EF
TU, CW
KOPF, RF
KUO, JM
LUNARDI, LM
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 25期
关键词：
D O I：
10.1063/1.101059
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2592 / 2594
页数：3
相关论文
共 50 条
  • [31] Theoretical study of plasmon-to-phonon modes in n-type AlxGa1-xAs
    Fang, C.S.
    Tse, W.S.
    Wang, W.K.
    Chang, C.P.
    Pai, K.F.
    Proceedings of the Asia Pacific Physics Conference, 1988,
  • [32] ORIGIN OF THE NEAR-INFRARED LUMINESCENCE IN N-TYPE ALXGA1-XAS ALLOYS
    CALLEJA, E
    FONTAINE, C
    MUNOZ, E
    MUNOZYAGUE, A
    FOCKELE, M
    SPAETH, JM
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (10) : 1006 - 1014
  • [33] AN ANOMALY IN THE RELATION OF HALL-COEFFICIENT TO RESISTIVITY IN N-TYPE ALXGA1-XAS
    AYABE, M
    MORI, Y
    WATANABE, N
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : L55 - L58
  • [34] INFLUENCE OF AN ELECTRIC-FIELD ON THE ANOMALOUS MAGNETORESISTANCE OF N-TYPE ALXGA1-XAS
    DURSHIMBETOV, K
    KRAVCHENKO, AF
    PALKIN, AM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (03): : 341 - 342
  • [35] Photoluminescence spectroscopy of band-gap narrowing in n-type AlxGa1-xAs
    Ghosh, S
    PHYSICAL REVIEW B, 2000, 62 (12): : 8053 - 8057
  • [36] n-type ion implantation doping of AlxGa1-xAs (0<=x<=0.7)
    Zolper, JC
    Klem, JF
    Baca, AG
    Sherwin, ME
    Hafich, MJ
    Drummond, TJ
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) : 2132 - 2137
  • [37] SI-SI PAIR DIFFUSION AND CORRELATION IN ALXGA1-XAS AND GAAS
    GAVRILOVIC, P
    GAVRILOVIC, J
    MEEHAN, K
    KALISKI, RW
    GUIDO, LJ
    HOLONYAK, N
    HESS, K
    BURNHAM, RD
    APPLIED PHYSICS LETTERS, 1985, 47 (07) : 710 - 712
  • [38] Deep levels in Si-doped AlxGa1-xAs layers
    Chung, CK
    Kang, TW
    Hong, CY
    Chang, KS
    Kim, TW
    APPLIED SURFACE SCIENCE, 1997, 115 (02) : 174 - 179
  • [39] Photoexcited states of DX centers in Si doped AlxGa1-xAs
    Jia, YB
    Grimmeiss, HG
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) : 3493 - 3503
  • [40] Investigation of temperature influence on photo-induced conductivity in N-type AlxGa1-xAs
    Taquecita, MH
    Scalvi, LVA
    Oliveira, L
    Li, MS
    Parreira, SB
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1998, 146 (1-4): : 175 - 186
12345