TRANSIENT EFFECTS IN EXTERNAL CAVITY SEMICONDUCTOR-LASERS

被引：5

|

作者：

OLSSON, NA

TSANG, WT

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 10期

关键词：

D O I：

10.1109/JQE.1983.1071740

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1479 / 1481

页数：3

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