TRANSIENT EFFECTS IN EXTERNAL CAVITY SEMICONDUCTOR-LASERS

被引：5
|
作者：
OLSSON, NA
TSANG, WT
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 10期
关键词：
D O I：
10.1109/JQE.1983.1071740
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1479 / 1481
页数：3
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