NEW DYNAMIC MULTIMODE MODEL FOR EXTERNAL CAVITY SEMICONDUCTOR-LASERS

被引：15

|

作者：

LOWERY, AJ

机构：

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1989年 / 136卷 / 04期

关键词：

D O I：

10.1049/ip-j.1989.0038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：229 / 237

页数：9

相关论文

共 50 条

[1] NEW DYNAMIC-MODEL FOR MULTIMODE CHIRP IN DFB SEMICONDUCTOR-LASERS
LOWERY, AJ
[J]. IEE PROCEEDINGS-J OPTOELECTRONICS, 1990, 137 (05): : 293 - 300
[2] TRANSIENT EFFECTS IN EXTERNAL CAVITY SEMICONDUCTOR-LASERS
OLSSON, NA
TSANG, WT
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (10) : 1479 - 1481
[3] POLARIZATION BISTABILITY IN EXTERNAL CAVITY SEMICONDUCTOR-LASERS
FUJITA, T
SCHREMER, A
TANG, CL
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 392 - 394
[4] MULTIMODE GENERATION IN SEMICONDUCTOR-LASERS
KOPAYEV, YV
TUGUSHEV, VV
[J]. ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1978, 74 (04): : 1489 - 1496
[5] BISTABILITY IN GRATING TUNED EXTERNAL CAVITY SEMICONDUCTOR-LASERS
ZORABEDIAN, P
TRUTNA, WR
CUTLER, LS
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (11) : 1855 - 1860
[6] THEORY OF SPECTRAL LINEWIDTH OF EXTERNAL CAVITY SEMICONDUCTOR-LASERS
SATO, H
OHYA, J
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (07) : 1060 - 1063
[7] INTENSITY FLUCTUATION IN SEMICONDUCTOR-LASERS COUPLED TO EXTERNAL CAVITY
SATO, H
FUJITA, T
FUJITO, K
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (01) : 46 - 51
[8] MULTIPLE FEEDBACK EFFECTS IN ASYMMETRIC EXTERNAL CAVITY SEMICONDUCTOR-LASERS
SEO, DS
PARK, JD
MCINERNEY, JG
OSINSKI, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (11) : 2229 - 2238
[9] NOISE AND FREQUENCY CHIRPING IN EXTERNAL-CAVITY SEMICONDUCTOR-LASERS
HUI, RQ
WU, YZ
[J]. OPTICS LETTERS, 1989, 14 (13) : 668 - 670
[10] TURN-ON JITTER OF EXTERNAL-CAVITY SEMICONDUCTOR-LASERS
HERNANDEZGARCIA, E
MIRASSO, CR
SHORE, KA
SANMIGUEL, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 241 - 248

← 1 2 3 4 5 →