共 50 条
- [1] GROWTH AND CRYSTALLIZATION OF AMORPHOUS LAYERS IN SILICON RESULTING FROM ENERGETIC ION-BOMBARDMENT [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 22 (04): : 520 - 523
- [3] GRAPHITIZATION OF AMORPHOUS DIAMONDLIKE CARBON-FILMS BY ION-BOMBARDMENT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1798 - 1802
- [5] STUDY OF THE GROWTH OF CARBON ON TARGETS DURING ION-BOMBARDMENT [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 227 (01): : 19 - 23
- [6] SPUTTERING OF ADSORBED LAYERS BY ION-BOMBARDMENT [J]. JOURNAL OF NUCLEAR MATERIALS, 1976, 63 (01) : 193 - 198
- [7] GROWTH OF AMORPHOUS-SILICON FILMS DUE TO CONTROLLED ION-BOMBARDMENT FROM A SILANE PLASMA [J]. ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1983, 8 (04): : 335 - 340
- [9] IDENTIFICATION OF EOR DEFECTS DUE TO THE REGROWTH OF AMORPHOUS LAYERS CREATED BY ION-BOMBARDMENT [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 84 (02): : 190 - 194
- [10] FORMATION AND CHARACTERIZATION OF CARBON LAYERS DEPOSITED DURING ION-BOMBARDMENT OF SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 434 - 437