THE GROWTH OF AMORPHOUS AND GRAPHITIC CARBON LAYERS UNDER ION-BOMBARDMENT IN AN RF PLASMA

被引:10
|
作者
NYAIESH, AR
HOLLAND, L
机构
关键词
D O I
10.1016/0042-207X(84)90369-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:519 / 522
页数:4
相关论文
共 50 条
  • [1] GROWTH AND CRYSTALLIZATION OF AMORPHOUS LAYERS IN SILICON RESULTING FROM ENERGETIC ION-BOMBARDMENT
    HOLMEN, G
    LINNROS, J
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 22 (04): : 520 - 523
  • [2] GROWTH OF NITRIDED SURFACE-LAYERS BY ION-BOMBARDMENT
    WINTERS, HF
    [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) : 4809 - &
  • [3] GRAPHITIZATION OF AMORPHOUS DIAMONDLIKE CARBON-FILMS BY ION-BOMBARDMENT
    GONZALEZHERNANDEZ, J
    ASOMOZA, R
    REYESMENA, A
    RICKARDS, J
    CHAO, SS
    PAWLIK, D
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1798 - 1802
  • [4] ION-BOMBARDMENT IN RF-PLASMAS
    LIU, J
    HUPPERT, GL
    SAWIN, HH
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 3916 - 3934
  • [5] STUDY OF THE GROWTH OF CARBON ON TARGETS DURING ION-BOMBARDMENT
    BLONDIAUX, G
    VALLADON, M
    QUAGLIA, L
    ROBAYE, G
    WEBER, G
    DEBRUN, JL
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 227 (01): : 19 - 23
  • [6] SPUTTERING OF ADSORBED LAYERS BY ION-BOMBARDMENT
    TAGLAUER, E
    BEITAT, U
    MARIN, G
    HEILAND, W
    [J]. JOURNAL OF NUCLEAR MATERIALS, 1976, 63 (01) : 193 - 198
  • [7] GROWTH OF AMORPHOUS-SILICON FILMS DUE TO CONTROLLED ION-BOMBARDMENT FROM A SILANE PLASMA
    DREVILLON, B
    PERRIN, J
    [J]. ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1983, 8 (04): : 335 - 340
  • [8] STRUCTURE FORMATION IN AMORPHOUS-CARBON FILMS UNDER INTERMEDIATE-ENERGY ION-BOMBARDMENT
    FOMINSKII, VY
    MARKEEV, AM
    NEVOLIN, VN
    PROKOPENKO, VB
    TRIPHONOV, AY
    [J]. VACUUM, 1993, 44 (09) : 873 - 877
  • [9] IDENTIFICATION OF EOR DEFECTS DUE TO THE REGROWTH OF AMORPHOUS LAYERS CREATED BY ION-BOMBARDMENT
    DEMAUDUIT, B
    LAANAB, L
    BERGAUD, C
    FAYE, MM
    MARTINEZ, A
    CLAVERIE, A
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 84 (02): : 190 - 194
  • [10] FORMATION AND CHARACTERIZATION OF CARBON LAYERS DEPOSITED DURING ION-BOMBARDMENT OF SILICON
    BRAUN, M
    KHOSROUPOUR, H
    JOHANSSON, E
    HOGMARK, S
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 434 - 437