THE GROWTH OF AMORPHOUS AND GRAPHITIC CARBON LAYERS UNDER ION-BOMBARDMENT IN AN RF PLASMA

被引:10
|
作者
NYAIESH, AR
HOLLAND, L
机构
关键词
D O I
10.1016/0042-207X(84)90369-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
下载
收藏
页码:519 / 522
页数:4
相关论文
共 50 条
  • [21] RESIST DEGRADATION UNDER PLASMA EXPOSURE - SYNERGISTIC EFFECTS OF ION-BOMBARDMENT
    JOUBERT, O
    FIORI, C
    OBERLIN, JC
    PANIEZ, P
    PELLETIER, J
    PONS, M
    VACHETTE, T
    WEILL, A
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) : 1697 - 1702
  • [22] DEFECT GENERATION IN THIN SIO2 LAYERS UNDER ION-BOMBARDMENT
    ADAMCHUK, VK
    AKULOV, AP
    AFANASYEV, VV
    VESTNIK LENINGRADSKOGO UNIVERSITETA SERIYA FIZIKA KHIMIYA, 1988, (02): : 91 - 94
  • [23] GROWTH OF MOLYBDENUM CARBIDE PARTICLES FROM AN AMORPHOUS PHASE INDUCED BY ION-BOMBARDMENT
    OKUYAMA, F
    FUJIMOTO, Y
    KATO, S
    KONDO, T
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (04): : 275 - 279
  • [24] THE ROLE OF ION-BOMBARDMENT IN THE RF-GLOW-DISCHARGE PREPARATION OF INTRINSIC AMORPHOUS-SILICON
    CARABE, J
    GANDIA, JJ
    GUTIERREZ, MT
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (09) : 4618 - 4621
  • [25] FORMATION OF CONDUCTIVE LAYERS ON DIELECTRIC SUBSTRATES BY ION-BOMBARDMENT
    PICHUGIN, VF
    FRANGULIAN, TS
    KRYUCHKOV, YY
    FEODOROV, AN
    RIABCHIKOV, AI
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 1203 - 1206
  • [26] USE OF ION-BOMBARDMENT IN THE STUDY OF AMORPHOUS-SEMICONDUCTORS
    APSLEY, N
    YOFFE, AD
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 71 - 89
  • [27] THE GROWTH OF MAGNETIC FEXN THIN-FILMS UNDER ION-BOMBARDMENT
    HUBLER, R
    TEIXEIRA, SR
    SCHREINER, WH
    BAUMVOL, IJR
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1992, 124 (03): : 271 - 279
  • [28] ION-BOMBARDMENT INDUCED RIPPLE TOPOGRAPHY ON AMORPHOUS SOLIDS
    CARTER, G
    NOBES, MJ
    PATON, F
    WILLIAMS, JS
    WHITTON, JL
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 65 - 73
  • [29] INHOMOGENEITY OF AN AMORPHOUS LAYER FORMED BY ION-BOMBARDMENT OF A SEMICONDUCTOR
    GERASIMENKO, NN
    DVURECHENSKII, AV
    MASHIN, AI
    KHOKHLOV, AF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (01): : 108 - 110
  • [30] THE RESPONSE OF SPUTTERED AMORPHOUS PHOSPHORUS TO INTENSE ION-BOMBARDMENT
    PHILLIPS, RT
    YOFFE, AD
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 88 (01) : 167 - 170