ELECTRONIC TRANSPORT INVESTIGATIONS ON SILICON DAMAGED BY ARSENIC ION-IMPLANTATION

被引：9
|
作者：
JAOUEN, H
GHIBAUDO, G
CHRISTOFIDES, C
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期
关键词：
D O I：
10.1063/1.337260
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1699 / 1704
页数：6
相关论文
共 50 条
  • [1] A STUDY OF MOLECULAR ARSENIC ION-IMPLANTATION IN SILICON
    LIN, CL
    FANG, ZW
    ZHOU, W
    NI, RS
    ZOU, SC
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 384 - 386
  • [2] DUAL ARSENIC AND BORON ION-IMPLANTATION IN SILICON
    YOKOTA, K
    OKAMOTO, Y
    MIYASHITA, F
    HIRAO, T
    WATANABE, M
    SEKINE, K
    ANDO, Y
    MATSUDA, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) : 7247 - 7251
  • [3] CHARACTERISTICS OF PHOTOACOUSTIC DISPLACEMENT FOR SILICON DAMAGED BY ION-IMPLANTATION
    TAKAMATSU, H
    SUMIE, S
    MORIMOTO, T
    KAWATA, Y
    MURAKI, T
    HARA, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1504 - 1509
  • [4] LASER-INDUCED PHOTOTHERMAL REFLECTANCE INVESTIGATION OF SILICON DAMAGED BY ARSENIC ION-IMPLANTATION - A TEMPERATURE STUDY
    VITKIN, IA
    CHRISTOFIDES, C
    MANDELIS, A
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (24) : 2392 - 2394
  • [5] PROCESSING OF TIN/TI METALLIZATION ON SILICON BY ARSENIC ION-IMPLANTATION
    MILOSAVLJEVIC, M
    BIBIC, N
    PERUSKO, D
    WILSON, IH
    JEYNES, C
    [J]. SURFACE & COATINGS TECHNOLOGY, 1990, 43-4 (1-3): : 996 - 1006
  • [6] ARSENIC INFLUENCE ON EXTENDED DEFECTS PRODUCED IN SILICON BY ION-IMPLANTATION
    COFFA, S
    CALCAGNO, L
    CATANIA, M
    RIMINI, E
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (24) : 2405 - 2407
  • [7] INFLUENCE OF ION-IMPLANTATION ON SURFACE TRANSPORT OF CARRIERS IN SILICON
    ROMANOV, OV
    URITSKII, VY
    YAFYASOV, AM
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 198 - 201
  • [8] Auger analysis of high-dose ion-implantation of arsenic in silicon
    Spasov, G.
    [J]. 17TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON, AND ION TECHNOLOGIES (VEIT 2011), 2012, 356
  • [9] ELECTRICAL AND STRUCTURAL-PROPERTIES OF SILICON LAYERS HEAVILY DAMAGED BY ION-IMPLANTATION
    BOUSSEYSAID, J
    GHIBAUDO, G
    STOEMENOS, I
    ZAUMSEIL, P
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) : 61 - 68
  • [10] ION-IMPLANTATION OF POROUS SILICON
    PENG, C
    FAUCHET, PM
    REHM, JM
    MCLENDON, GL
    SEIFERTH, F
    KURINEC, SK
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (10) : 1259 - 1261
12345