首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
EFFECT OF FIELD PLATE ON THE ELECTRICAL BREAKDOWN CHARACTERISTICS OF BIPOLAR-TRANSISTORS
被引:0
|
作者
:
ANANDA, HV
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL, DEPT ELECT COMMUN ENGN, BANGALORE 560012, INDIA
INDIAN INST TECHNOL, DEPT ELECT COMMUN ENGN, BANGALORE 560012, INDIA
ANANDA, HV
[
1
]
SATYAM, M
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL, DEPT ELECT COMMUN ENGN, BANGALORE 560012, INDIA
INDIAN INST TECHNOL, DEPT ELECT COMMUN ENGN, BANGALORE 560012, INDIA
SATYAM, M
[
1
]
机构
:
[1]
INDIAN INST TECHNOL, DEPT ELECT COMMUN ENGN, BANGALORE 560012, INDIA
来源
:
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
1989年
/ 114卷
/ 02期
关键词
:
D O I
:
10.1002/pssa.2211140271
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:K259 / K262
页数:4
相关论文
共 50 条
[41]
KINK EFFECT ON THE BASE CURRENT OF HETEROJUNCTION BIPOLAR-TRANSISTORS
LIOU, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Solid State Electronics Directorate Wright Laboratory Wright-Patterson Air Force Base OH
LIOU, JJ
LIOU, LL
论文数:
0
引用数:
0
h-index:
0
机构:
Solid State Electronics Directorate Wright Laboratory Wright-Patterson Air Force Base OH
LIOU, LL
HUANG, CI
论文数:
0
引用数:
0
h-index:
0
机构:
Solid State Electronics Directorate Wright Laboratory Wright-Patterson Air Force Base OH
HUANG, CI
SOLID-STATE ELECTRONICS,
1993,
36
(08)
: 1222
-
1224
[42]
ORIENTATION EFFECT ON ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ISHIDA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Electronics Research Laboratory, Matsushita Electronics Corporation, Osaka
ISHIDA, H
UEDA, D
论文数:
0
引用数:
0
h-index:
0
机构:
Electronics Research Laboratory, Matsushita Electronics Corporation, Osaka
UEDA, D
IEEE ELECTRON DEVICE LETTERS,
1995,
16
(10)
: 448
-
450
[43]
INTERMODULATION IN HETEROJUNCTION BIPOLAR-TRANSISTORS
MAAS, SA
论文数:
0
引用数:
0
h-index:
0
机构:
TRW CO INC, TECH STAFF, REDONDO BEACH, CA 90278 USA
TRW CO INC, TECH STAFF, REDONDO BEACH, CA 90278 USA
MAAS, SA
NELSON, BL
论文数:
0
引用数:
0
h-index:
0
机构:
TRW CO INC, TECH STAFF, REDONDO BEACH, CA 90278 USA
TRW CO INC, TECH STAFF, REDONDO BEACH, CA 90278 USA
NELSON, BL
TAIT, DL
论文数:
0
引用数:
0
h-index:
0
机构:
TRW CO INC, TECH STAFF, REDONDO BEACH, CA 90278 USA
TRW CO INC, TECH STAFF, REDONDO BEACH, CA 90278 USA
TAIT, DL
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1992,
40
(03)
: 442
-
448
[44]
CHARGE COLLECTION IN BIPOLAR-TRANSISTORS
KNUDSON, AR
论文数:
0
引用数:
0
h-index:
0
KNUDSON, AR
CAMPBELL, AB
论文数:
0
引用数:
0
h-index:
0
CAMPBELL, AB
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1987,
34
(06)
: 1246
-
1250
[45]
RADIATION HARDNESS CHARACTERISTICS OF GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
SONG, Y
论文数:
0
引用数:
0
h-index:
0
SONG, Y
KIM, ME
论文数:
0
引用数:
0
h-index:
0
KIM, ME
OKI, AK
论文数:
0
引用数:
0
h-index:
0
OKI, AK
HAFIZI, ME
论文数:
0
引用数:
0
h-index:
0
HAFIZI, ME
CAMOU, JB
论文数:
0
引用数:
0
h-index:
0
CAMOU, JB
KOBAYASHI, KW
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, KW
GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989,
1989,
: 155
-
158
[46]
ON THE CONTROL OF SATURATION IN BIPOLAR-TRANSISTORS
CHAUHAN, AS
论文数:
0
引用数:
0
h-index:
0
机构:
BIRLA INST TECHNOL & SCI,CTR INSTRUMENTAT,PILANI 333031,RAJASTHAN,INDIA
BIRLA INST TECHNOL & SCI,CTR INSTRUMENTAT,PILANI 333031,RAJASTHAN,INDIA
CHAUHAN, AS
MAHESHWARI, LK
论文数:
0
引用数:
0
h-index:
0
机构:
BIRLA INST TECHNOL & SCI,CTR INSTRUMENTAT,PILANI 333031,RAJASTHAN,INDIA
BIRLA INST TECHNOL & SCI,CTR INSTRUMENTAT,PILANI 333031,RAJASTHAN,INDIA
MAHESHWARI, LK
INTERNATIONAL JOURNAL OF ELECTRONICS,
1982,
52
(04)
: 341
-
344
[47]
CHARGE SEPARATION FOR BIPOLAR-TRANSISTORS
KOSIER, SL
论文数:
0
引用数:
0
h-index:
0
机构:
PHILLIPS LAB,VTE,ALBUQUERQUE,NM
KOSIER, SL
SCHRIMPF, RD
论文数:
0
引用数:
0
h-index:
0
机构:
PHILLIPS LAB,VTE,ALBUQUERQUE,NM
SCHRIMPF, RD
NOWLIN, RN
论文数:
0
引用数:
0
h-index:
0
机构:
PHILLIPS LAB,VTE,ALBUQUERQUE,NM
NOWLIN, RN
FLEETWOOD, DM
论文数:
0
引用数:
0
h-index:
0
机构:
PHILLIPS LAB,VTE,ALBUQUERQUE,NM
FLEETWOOD, DM
DELAUS, M
论文数:
0
引用数:
0
h-index:
0
机构:
PHILLIPS LAB,VTE,ALBUQUERQUE,NM
DELAUS, M
PEASE, RL
论文数:
0
引用数:
0
h-index:
0
机构:
PHILLIPS LAB,VTE,ALBUQUERQUE,NM
PEASE, RL
COMBS, WE
论文数:
0
引用数:
0
h-index:
0
机构:
PHILLIPS LAB,VTE,ALBUQUERQUE,NM
COMBS, WE
WEI, A
论文数:
0
引用数:
0
h-index:
0
机构:
PHILLIPS LAB,VTE,ALBUQUERQUE,NM
WEI, A
CHAI, F
论文数:
0
引用数:
0
h-index:
0
机构:
PHILLIPS LAB,VTE,ALBUQUERQUE,NM
CHAI, F
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1993,
40
(06)
: 1276
-
1285
[48]
GAASSB FOR HETEROJUNCTION BIPOLAR-TRANSISTORS
IKOSSIANASTASIOU, K
论文数:
0
引用数:
0
h-index:
0
机构:
Solid State Laboratory, Department of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA
IKOSSIANASTASIOU, K
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1993,
40
(05)
: 878
-
884
[49]
RECIPROCITY IN HETEROJUNCTION BIPOLAR-TRANSISTORS
STDENIS, A
论文数:
0
引用数:
0
h-index:
0
机构:
COMMUN RES CTR,OTTAWA K2H 8S2,ONTARIO,CANADA
STDENIS, A
PULFREY, DL
论文数:
0
引用数:
0
h-index:
0
机构:
COMMUN RES CTR,OTTAWA K2H 8S2,ONTARIO,CANADA
PULFREY, DL
MARTY, A
论文数:
0
引用数:
0
h-index:
0
机构:
COMMUN RES CTR,OTTAWA K2H 8S2,ONTARIO,CANADA
MARTY, A
SOLID-STATE ELECTRONICS,
1992,
35
(11)
: 1633
-
1637
[50]
EMITTER EFFICIENCY OF BIPOLAR-TRANSISTORS
GRAAFF, HCD
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
GRAAFF, HCD
SLOTBOOM, JW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
SLOTBOOM, JW
SCHMITZ, A
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
SCHMITZ, A
SOLID-STATE ELECTRONICS,
1977,
20
(06)
: 515
-
521
←
1
2
3
4
5
→