GEOMETRICAL AND LIGHT-INDUCED EFFECTS ON BACK-GATING IN ION-IMPLANTED GAAS-MESFETS

被引：24
|
作者：
SUBRAMANIAN, S
BHATTACHARYA, PK
STAKER, KJ
GHOSH, CL
BADAWI, MH
机构：
[1] STAND TELECOMMUN LABS LTD,HARLOW CM17 9NA,ESSEX,ENGLAND
[2] ITT,GALLIUM ARSENIDE TECHNOL CTR,ROANOKE,VA 24019
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 01期
关键词：
D O I：
10.1109/T-ED.1985.21904
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：28 / 33
页数：6
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