GEOMETRICAL AND LIGHT-INDUCED EFFECTS ON BACK-GATING IN ION-IMPLANTED GAAS-MESFETS

被引：24

作者：

SUBRAMANIAN, S

BHATTACHARYA, PK

STAKER, KJ

GHOSH, CL

BADAWI, MH

机构：

[1] STAND TELECOMMUN LABS LTD,HARLOW CM17 9NA,ESSEX,ENGLAND

[2] ITT,GALLIUM ARSENIDE TECHNOL CTR,ROANOKE,VA 24019

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 01期

关键词：

D O I：

10.1109/T-ED.1985.21904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：28 / 33

页数：6

共 50 条

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