OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE IN IN0.53GA0.47AS/INP-FE JFETS

被引：1
|
作者：
ALBRECHT, H
机构：
[1] Siemens AG, Research Lab, Munich,, West Ger, Siemens AG, Research Lab, Munich, West Ger
来源：
ELECTRONICS LETTERS | 1984年 / 20卷 / 22期
关键词：
D O I：
10.1049/el:19840632
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A negative differential resistance (NDR) is observed in the drain-current/drain-source-voltage characteristic of In//0//. //5//3-Ga//0//. //4//7As/InP:Fe JFETs with gate lengths of 2 mu m and 3 mu m at small forward-biased gate-source voltages. This phenomenon is explained by the existence of a stationary Gunn domain in the channel at the drain side edge of the gate.
引用
收藏
页码：930 / 931
页数：2
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