OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE IN IN0.53GA0.47AS/INP-FE JFETS

被引：1
|
作者：
ALBRECHT, H
机构：
[1] Siemens AG, Research Lab, Munich,, West Ger, Siemens AG, Research Lab, Munich, West Ger
来源：
ELECTRONICS LETTERS | 1984年 / 20卷 / 22期
关键词：
D O I：
10.1049/el:19840632
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A negative differential resistance (NDR) is observed in the drain-current/drain-source-voltage characteristic of In//0//. //5//3-Ga//0//. //4//7As/InP:Fe JFETs with gate lengths of 2 mu m and 3 mu m at small forward-biased gate-source voltages. This phenomenon is explained by the existence of a stationary Gunn domain in the channel at the drain side edge of the gate.
引用
收藏
页码：930 / 931
页数：2
相关论文
共 50 条
  • [21] Observation of Landau levels and excitons at room temperature in In0.53Ga0.47As/InP quantum wells
    Jaschinski, O
    Vergohl, M
    Schoenes, J
    Schlachetzki, A
    Bonsch, P
    PHYSICAL REVIEW B, 1998, 57 (20) : 13086 - 13093
  • [22] MICROWAVE PERFORMANCE OF IN0.53GA0.47AS/INP - FE JUNCTION FIELD-EFFECT TRANSISTORS
    ALBRECHT, H
    MULLER, JE
    AEU-ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1988, 42 (02): : 96 - 99
  • [23] NEGATIVE DIFFERENTIAL RESISTANCE IN INP JFETS
    KRUPPA, W
    BOOS, JB
    ELECTRONICS LETTERS, 1989, 25 (05) : 299 - 301
  • [24] Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices
    Hanamoto, LK
    Henriques, AB
    Tribuzy, CVB
    Souza, PL
    Yavich, B
    Abramof, E
    BRAZILIAN JOURNAL OF PHYSICS, 2002, 32 (02) : 334 - 337
  • [25] Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode
    Yuan Zheng-bing
    Xiao Qing-quan
    Yang Wen-xian
    Xiao Meng
    Wu Yuan-yuan
    Tan Ming
    Dai Pan
    Li Xue-fei
    Xie Quan
    Lu Shu-long
    ACTA PHOTONICA SINICA, 2018, 47 (03)
  • [26] IN0.53GA0.47AS INP HETEROJUNCTIONS WITH LOW INTERFACE DEFECT DENSITIES
    LEE, CD
    FORREST, SR
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 342 - 351
  • [27] Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
    Alian, Alireza
    Brammertz, Guy
    Merckling, Clement
    Firrincieli, Andrea
    Wang, Wei-E
    Lin, H. C.
    Caymax, Matty
    Meuris, Marc
    De Meyer, Kristin
    Heyns, Marc
    APPLIED PHYSICS LETTERS, 2011, 99 (11)
  • [28] Sensitive In0.53Ga0.47As/InP (SI) magnetic field sensors
    Przeslawski, T
    Wolkenberg, A
    Reginski, K
    Kaniewski, J
    E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS, 2004, 1 (02): : 242 - 246
  • [29] Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells
    Patricio, M. A. Tito
    Tavares, B. G. M.
    Jacobsen, J. M.
    Teodoro, M. D.
    LaPierre, R. R.
    Pusep, Yu. A.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2021, 131
  • [30] SELECTIVE LPE-GROWTH OF IN0.53GA0.47AS ON SEMIINSULATING INP
    SCHILLING, M
    SCHEMMEL, G
    TEGUDE, FJ
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 259 - 262
12345