CHEMISTRY AND PHYSICS OF AMORPHOUS-SEMICONDUCTORS

被引：7

作者：

ADLER, D ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

关键词：

D O I：

10.1007/BF00396353

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：574 / 584

页数：11

共 50 条

[31] CHEMICAL BONDING IN AMORPHOUS-SEMICONDUCTORS
GRIGOROVICI, R
[J]. SOLAR ENERGY MATERIALS, 1982, 8 (1-3): : 177 - 185
[32] PHENOMENOLOGICAL MODEL OF AMORPHOUS-SEMICONDUCTORS
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[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 414 - 414
[33] RECOMBINATION KINETICS IN AMORPHOUS-SEMICONDUCTORS
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[J]. AIP CONFERENCE PROCEEDINGS, 1984, (120) : 197 - 204
[34] DC TRANSPORT IN AMORPHOUS-SEMICONDUCTORS
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 151 - 154
[35] RADIATION TOLERANCE OF AMORPHOUS-SEMICONDUCTORS
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (01) : 839 - 848
[36] BAND TAILS IN AMORPHOUS-SEMICONDUCTORS
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 149 - 154
[37] DIAMAGNETIC ENHANCEMENT IN AMORPHOUS-SEMICONDUCTORS
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[J]. PHYSICS LETTERS A, 1987, 121 (06) : 317 - 321
[38] ELECTROPHOTOGRAPHIC APPLICATIONS OF AMORPHOUS-SEMICONDUCTORS
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[J]. JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1983, 6 : 325 - 336
[39] TUNNELING STATES IN AMORPHOUS-SEMICONDUCTORS
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[40] DIELECTRIC SUSCEPTIBILITY OF AMORPHOUS-SEMICONDUCTORS
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (32): : L869 - L873